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      2002 May 28 4 NXP Semiconductors Product data sheet Schottky barrier diode BAT254 GRAPHICAL DATA 3 handbook, halfpage10 IF VF (V) 102 (mA) 10 1 10 1 0 1.2 0.8 0.4 MSA892 (3) (2) (1) (1) (2) (3) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage; typical values. 0102030V (V)R 10 3 IR (μA) 10 2 10 1 10 1 (1) (2) (3) MSA893 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.3 Reverse current as a function of reverse voltage; typical values. 15handbook, halfpage 0 0102030VR (V) 5 10 Cd (pF) MSA891 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. Fig.5 Reverse recovery definitions. handbook, halfpageIF 90% 10% t tf Qr dIF dt IR MRC129 - 1 |